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 BBY53...
Silicon Tuning Diode * High Q hyperabrupt tuning diode * Designed for low tuning voltage operation for VCO's in mobile communications equipment * High ratio at low reverse voltage
BBY53-02L BBY53-02V BBY53-02W BBY53-03W
BBY53-03L
BBY53 BBY53-05W
3
3
1
2
D1
D2
1
2
1
2
Type BBY53 BBY53-02L* BBY53-02V BBY53-02W BBY53-03L* BBY53-03W BBY53-05W
Package SOT23 TSLP-2-1 SC79 SCD80 TSLP-3-1 SOD323 SOT323
Configuration common cathode single, leadless single single single, leadless single common cathode
LS(nH) 2 0.4 0.6 0.6 0.4 1.8 1.4
Marking S7s LL L LL LL white/5 S7s
* Preliminary
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 6 20 -55 ... 125 -55 ... 150 Unit V mA C
1
Oct-13-2003
BBY53...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 4 V VR = 4 V, T A = 85 C
AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz rS 0.47 CT1/CT3 CT 4.8 1.85 1.8 5.3 2.4 2.2 5.8 3.1 2.6 pF
Unit max. nA
typ.
IR 10 200
2
Oct-13-2003
BBY53...
Diode capacitance CT = (VR)
f = 1MHz
Capacitance change C = (TA)
f = 1 MHz
5.25
%
pF9
8.4 8 7.6 7.2 6.8 6.4 6 5.6 5.2 4.8 4.4 4 3.6 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0
3.75 3
3V 1V
C T
2.4 2.8 3.2 V
CT
2.25 1.5 0.75 0 -0.75 -1.5 -2.25 -3
0.4 0.8 1.2 1.6
2
4
-3.75 -40
-20
0
20
40
60
C
100
VR
TA
Temperature coefficient of the diode capacitance TCC = (VR )
f = 1 MHz
10 -2
1/C
TCC
10 -3 10 -4 0
0.5
1
1.5
2
2.5
3
V
4
VR
3
Oct-13-2003


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